Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2006-06-20

2006-06-20

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

Reexamination Certificate

active

07064024

ABSTRACT:
According to the present invention, there is provided a semiconductor device having:first and second fins formed on a semiconductor substrate to oppose each other, and made of a semiconductor layer;an active region which is formed on the semiconductor substrate so as to be connected to the first and second fins, and supplies a predetermined voltage to the first and second fins; anda gate electrode formed on an insulating film formed on the semiconductor substrate, in a position separated from the active region by a predetermined spacing, so as to cross the first and second fins,wherein in the active region, a predetermined portion between a first portion connected to the first fin and a second portion connected to the second fin is removed.

REFERENCES:
patent: 2003/0111686 (2003-06-01), Nowak
Choi, Y. K. et al., “A Spacer Patterning Technology for Nanoscale CMOS,” IEEE Transactions on Electron Devices, vol. 49, No. 3, pp. 436-441, (Mar. 2002).

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