Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2006-06-20

2006-06-20

Clark, Jasmine (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Bump leads

C257S778000, C257S779000, C257SE23021, C257SE23069

Reexamination Certificate

active

07064436

ABSTRACT:
A semiconductor device includes a semiconductor substrate and an array of protruding electrodes arranged at a pitch X1. Each of the protruding electrodes has a height X3and is formed on a barrier metal base of diameter X2coupled to an electrode arranged on the semiconductor substrate so as to satisfy the relations (X1/2)≦X2≦(3*X1/4) and (X1/2)≦X3≦(3*X1/4).

REFERENCES:
patent: 5726501 (1998-03-01), Matsubara
patent: 5880017 (1999-03-01), Schwiebert et al.
patent: 2002/0113312 (2002-08-01), Clatanoff et al.
patent: 2985426 (1991-10-01), None
patent: 11-195665 (1999-07-01), None
patent: 2000-133667 (2000-05-01), None
patent: 3407839 (2003-03-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3680144