Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2006-02-14

2006-02-14

Mai, Anh Duy (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S409000, C257S630000

Reexamination Certificate

active

06998679

ABSTRACT:
A semiconductor device includes a gate electrode on a semiconductor substrate, a source electrode and a drain electrode that are provided on the semiconductor substrate, the gate electrode being interposed between the source electrode and the drain electrode, an insulating layer covering the gate electrode, and a source wall that extends from the source electrode and passes over the gate electrode, an end surface of the source wall being interposed between the gate electrode and the drain electrode and being located in a position lower than a top surface of the gate electrode.

REFERENCES:
patent: 5252848 (1993-10-01), Adler et al.
patent: 6504190 (2003-01-01), Haematsu
patent: 2002/0033508 (2002-03-01), Morikawa et al.
patent: 2002/0053699 (2002-05-01), Kim et al.
patent: 3-35536 (1991-02-01), None
patent: 6-349859 (1994-12-01), None
patent: 11-168099 (1999-06-01), None
patent: 2002-110700 (2002-04-01), None
A. Wood et al, High Performance Silicon LDMOS Technology for 2GHz RF Power Amplifier Applications. IEDM 1996, pp. 87-90.

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