Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2006-05-16

2006-05-16

Tran, Thien F. (Department: 2811)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S586000, C438S587000, C438S588000, C438S592000

Reexamination Certificate

active

07045448

ABSTRACT:
According to the present invention, there is provided a semiconductor device, comprising:a gate electrode formed on a substrate via a gate insulating film by using a first silicide film;diffusion layers formed in a surface portion of said substrate so as to be positioned at two ends of a channel region below said gate electrode, and having a second silicide film on surfaces thereof;a first insulating film formed on said second suicide film of said diffusion layers; anda second insulating film continuously formed on said first insulating film and said gate electrode,wherein a total film thickness of said first and second insulating films on said second silicide film is larger than a film thickness of said second insulating film on said gate electrode.

REFERENCES:
patent: 6518642 (2003-02-01), Kim et al.
patent: 6555450 (2003-04-01), Park et al.
patent: 6586809 (2003-07-01), Segawa
patent: 2004/0043595 (2004-03-01), Lee et al.
patent: 11-214677 (1999-08-01), None
patent: 2000-133705 (2000-05-01), None
patent: 2000-216242 (2000-08-01), None
patent: 2000-353803 (2000-12-01), None

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