Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2006-09-12

2006-09-12

Nguyen, Ha Tran (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S638000, C438S798000

Reexamination Certificate

active

07105464

ABSTRACT:
A semiconductor device includes a semiconductor substrate which has a major surface and a MOS transistor which has a gate and first and second diffusion regions and which is formed on the major surface. The semiconductor device also includes a laminated structure of a SOG layer, wherein the laminated structure is composed of a base layer and a surface layer formed on the base layer and is formed over the MOS transistor and wherein the surface layer is denser than the base layer.

REFERENCES:
patent: 5604155 (1997-02-01), Wang
patent: 5716872 (1998-02-01), Isobe
patent: 5808363 (1998-09-01), Watanabe
patent: 5903041 (1999-05-01), La Fleur et al.
patent: 6091154 (2000-07-01), Ohkawa
patent: 6117785 (2000-09-01), Lee et al.
patent: 6171951 (2001-01-01), Lee et al.
patent: 6246105 (2001-06-01), Morozumi et al.
patent: 2000/0028552 (2002-03-01), Lee et al.
patent: 1-208831 (1989-08-01), None
patent: 06021095 (1994-01-01), None
patent: 08046044 (1996-02-01), None
patent: 09069562 (1997-03-01), None
patent: 10-107144 (1998-04-01), None
patent: 10-321724 (1998-12-01), None
Sorab K. Ghandhi; “VLSI Fabrication Principles, Silicon and Gallium Arsenide” (Second Edition); Copyright 1994; p. 528 and p. 725; A Wiley-Interscience Publication, John Wiley & Sons, Inc.

Affiliated with

Also associated with

Rating

Semiconductor device and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3588131