Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2006-01-24

2006-01-24

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S301000, C365S149000, C438S296000, C438S301000

Reexamination Certificate

active

06989560

ABSTRACT:
Since at least a portion of a trench capacitor electrode is formed by a metal, the electrical sheet resistance of the electrode can be lowered, and the signal propagation time prolonged by CR delay can be shortened. This can reduce the read/write time. The formation of a buried gate electrode can realize a reduction of the cell area, which is required in a DRAM- and a DRAM/logic-embedded device. This can increase the gate length and reduce the short channel effect. Since an insulating protective film is deposited on the gate electrode, a bit line contact can be formed in self-alignment.

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