Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2005-12-20

2005-12-20

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C257S344000, C257S371000, C257S374000, C257S408000, C438S223000, C438S207000, C438S306000

Reexamination Certificate

active

06977417

ABSTRACT:
An impurity-diffused layer having an extension structure is formed first by implanting Sb ion as an impurity for forming a pocket region; then by implanting N as a diffusion-suppressive substance so as to produce two peaks in the vicinity of the interface with a gate electrode and at an amorphous/crystal interface which serves as an defect interface generated by the impurity in the pocket region; and by carrying out ion implantations for forming an extension region and deep source and drain regions.

REFERENCES:
patent: 6159856 (2000-12-01), Nagano
patent: 6297114 (2001-10-01), Iwata et al.
patent: 6440802 (2002-08-01), Hayashi et al.
patent: 10-209265 (1998-08-01), None

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