Semiconductor device and method of fabricating the same,...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S773000, C257S737000, C257S738000, C257S780000, C257S787000

Reexamination Certificate

active

06924558

ABSTRACT:
A semiconductor device has: a semiconductor substrate having an integrated circuit and an electrode that is connected electrically to the integrated circuit; a resin layer formed on a surface of the semiconductor substrate on which the electrode is formed, but avoiding the electrode; and a wiring layer that is connected electrically to the electrode and has a land which is located on the resin layer. A penetrating hole that exposes the resin layer is formed in the land.

REFERENCES:
patent: 5220199 (1993-06-01), Owada et al.
patent: A 11-297873 (1999-10-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and method of fabricating the same,... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of fabricating the same,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of fabricating the same,... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3488928

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.