Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Reexamination Certificate
2005-08-02
2005-08-02
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
C257S773000, C257S737000, C257S738000, C257S780000, C257S787000
Reexamination Certificate
active
06924558
ABSTRACT:
A semiconductor device has: a semiconductor substrate having an integrated circuit and an electrode that is connected electrically to the integrated circuit; a resin layer formed on a surface of the semiconductor substrate on which the electrode is formed, but avoiding the electrode; and a wiring layer that is connected electrically to the electrode and has a land which is located on the resin layer. A penetrating hole that exposes the resin layer is formed in the land.
REFERENCES:
patent: 5220199 (1993-06-01), Owada et al.
patent: A 11-297873 (1999-10-01), None
Oliff & Berridg,e PLC
Parekh Nitin
Seiko Epson Corporation
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