Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-03-29
2005-03-29
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S164000, C438S166000, C438S795000
Reexamination Certificate
active
06872605
ABSTRACT:
Two kinds of TFTs are fabricated by the same process with a high production yield to manufacture an active-matrix circuit and a peripheral driver circuit on the same substrate. The active-matrix circuit is required to have a high mobility and a high ON/OFF current ratio. The peripheral driver circuit needs a complex interconnection structure. The active-matrix circuit and the peripheral driver circuit comprising the TFTs are fabricated monolithically. In this step, the gate electrodes of the TFTs of the active-matrix circuit is coated with an anodic oxide on their top and side surfaces. The gate electrodes of the TFTs of the peripheral driver circuit is coated with the anodic oxide on only their top surfaces; substantially no anodic oxide is present on the side surfaces.
REFERENCES:
patent: 4198246 (1980-04-01), Wu
patent: 4331485 (1982-05-01), Gat
patent: 4351856 (1982-09-01), Matsui et al.
patent: 4394191 (1983-07-01), Wada et al.
patent: 4482395 (1984-11-01), Hiramoto
patent: 4536251 (1985-08-01), Chiang et al.
patent: 4582395 (1986-04-01), Morozumi
patent: 4654959 (1987-04-01), Takafuji et al.
patent: 4693759 (1987-09-01), Noguchi et al.
patent: 4727044 (1988-02-01), Yamazaki
patent: 4741601 (1988-05-01), Saito
patent: 4778258 (1988-10-01), Parks et al.
patent: 4847211 (1989-07-01), Lee
patent: 4951113 (1990-08-01), Huang et al.
patent: 4963503 (1990-10-01), Aoui et al.
patent: 5032531 (1991-07-01), Tsutsui et al.
patent: 5064775 (1991-11-01), Chang
patent: 5112764 (1992-05-01), Mitra et al.
patent: 5147826 (1992-09-01), Liu et al.
patent: 5200846 (1993-04-01), Hiroki et al.
patent: 5202274 (1993-04-01), Bae et al.
patent: 5219786 (1993-06-01), Noguchi
patent: 5231039 (1993-07-01), Sakono et al.
patent: 5262654 (1993-11-01), Yamazaki
patent: 5272361 (1993-12-01), Yamazaki
patent: 5275851 (1994-01-01), Fonash et al.
patent: 5278093 (1994-01-01), Yonehara
patent: 5287205 (1994-02-01), Yamazaki et al.
patent: 5289030 (1994-02-01), Yamazaki et al.
patent: 5292675 (1994-03-01), Codama
patent: 5294555 (1994-03-01), Mano et al.
patent: 5300187 (1994-04-01), Lesk et al.
patent: 5306651 (1994-04-01), Masumo et al.
patent: 5308998 (1994-05-01), Yamazaki et al.
patent: 5313076 (1994-05-01), Yamazaki et al.
patent: 5316960 (1994-05-01), Watanabe et al.
patent: 5317432 (1994-05-01), Ino
patent: 5318661 (1994-06-01), Kumomi
patent: 5318919 (1994-06-01), Noguchi et al.
patent: 5320973 (1994-06-01), Kobayashi
patent: 5323042 (1994-06-01), Matsumoto
patent: 5326712 (1994-07-01), Bae
patent: 5341012 (1994-08-01), Misawa et al.
patent: 5352291 (1994-10-01), Zhang et al.
patent: 5366922 (1994-11-01), Aoki et al.
patent: 5373803 (1994-12-01), Noguchi et al.
patent: 5397718 (1995-03-01), Furuta et al.
patent: 5403762 (1995-04-01), Takemura
patent: 5403772 (1995-04-01), Zhang et al.
patent: 5426064 (1995-06-01), Zhang et al.
patent: 5481121 (1996-01-01), Zhang et al.
patent: 5488000 (1996-01-01), Zhang et al.
patent: 5492843 (1996-02-01), Adachi et al.
patent: 5501989 (1996-03-01), Takayama et al.
patent: 5508533 (1996-04-01), Takemura
patent: 5523257 (1996-06-01), Yamazaki et al.
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5531182 (1996-07-01), Yonehara
patent: 5534716 (1996-07-01), Takemura
patent: 5543352 (1996-08-01), Ohtani et al.
patent: 5563426 (1996-10-01), Zhang et al.
patent: 5569610 (1996-10-01), Zhang et al.
patent: 5569936 (1996-10-01), Zhang et al.
patent: 5580792 (1996-12-01), Zhang et al.
patent: 5585291 (1996-12-01), Ohtani et al.
patent: 5589694 (1996-12-01), Takayama et al.
patent: 5595923 (1997-01-01), Zhang et al.
patent: 5595944 (1997-01-01), Zhang et al.
patent: 5604360 (1997-02-01), Zhang et al.
patent: 5605846 (1997-02-01), Ohtani et al.
patent: 5606179 (1997-02-01), Yamazaki et al.
patent: 5608232 (1997-03-01), Yamazaki et al.
patent: 5612250 (1997-03-01), Ohtani et al.
patent: 5614426 (1997-03-01), Funada et al.
patent: 5614733 (1997-03-01), Zhang et al.
patent: 5616506 (1997-04-01), Takemura
patent: 5620910 (1997-04-01), Teramoto
patent: 5621224 (1997-04-01), Yamazaki et al.
patent: 5624851 (1997-04-01), Takayama et al.
patent: 5637515 (1997-06-01), Takemura
patent: 5639698 (1997-06-01), Yamazaki et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5646424 (1997-07-01), Zhang et al.
patent: 5654203 (1997-08-01), Ohtani et al.
patent: 5656825 (1997-08-01), Kusumoto et al.
patent: 5663077 (1997-09-01), Adachi et al.
patent: 5677240 (1997-10-01), Murakami et al.
patent: 5677549 (1997-10-01), Takayama et al.
patent: 5696386 (1997-12-01), Yamazaki
patent: 5696388 (1997-12-01), Funada et al.
patent: 5700333 (1997-12-01), Yamazaki et al.
patent: 5705829 (1998-01-01), Miyanaga et al.
patent: 5712191 (1998-01-01), Nakajima et al.
patent: 5756364 (1998-05-01), Tanaka et al.
patent: 5804471 (1998-09-01), Yamazaki et al.
patent: 5866932 (1999-02-01), Yamazaki et al.
patent: 5869363 (1999-02-01), Yamazaki et al.
patent: 5888857 (1999-03-01), Zhang
patent: 5888858 (1999-03-01), Yamazaki et al.
patent: 5897347 (1999-04-01), Yamazaki et al.
patent: 5946561 (1999-08-01), Yamazaki et al.
patent: 5985740 (1999-11-01), Yamazaki et al.
patent: 6130118 (2000-10-01), Yamazaki
patent: 6210997 (2001-04-01), Adachi et al.
patent: 6458200 (2002-10-01), Zhang
patent: 6541313 (2003-04-01), Zhang et al.
patent: 6740547 (2004-05-01), Zhang
patent: 20030017656 (2003-01-01), Zhang
patent: 0 390 608 (1990-10-01), None
patent: 0 459 836 (1991-12-01), None
patent: 2171844 (1986-09-01), None
patent: 44-015736 (1969-07-01), None
patent: 45-022173 (1970-07-01), None
patent: 55-024420 (1980-02-01), None
patent: 58-040820 (1983-03-01), None
patent: 58-052843 (1983-03-01), None
patent: 59-075670 (1984-04-01), None
patent: 59-132674 (1984-07-01), None
patent: 60-105216 (1985-06-01), None
patent: 60-154660 (1985-08-01), None
patent: 61-030023 (1986-02-01), None
patent: 61-063017 (1986-04-01), None
patent: 61-166528 (1986-10-01), None
patent: 61-234027 (1986-10-01), None
patent: 61-253855 (1986-11-01), None
patent: 62-298151 (1987-12-01), None
patent: 63-041029 (1988-02-01), None
patent: 63-056912 (1988-03-01), None
patent: 63-142807 (1988-06-01), None
patent: 63-194326 (1988-08-01), None
patent: 63-283013 (1988-11-01), None
patent: 64-053553 (1989-03-01), None
patent: 01-171274 (1989-07-01), None
patent: 01-187814 (1989-07-01), None
patent: 01-212431 (1989-08-01), None
patent: 01-243358 (1989-09-01), None
patent: 01-270309 (1989-10-01), None
patent: 02-027320 (1990-01-01), None
patent: 02-033934 (1990-02-01), None
patent: 02-094519 (1990-04-01), None
patent: 02-140915 (1990-05-01), None
patent: 02-194561 (1990-08-01), None
patent: 02-202028 (1990-08-01), None
patent: 02-228043 (1990-09-01), None
patent: 02-260524 (1990-10-01), None
patent: 02-278836 (1990-11-01), None
patent: 03-011618 (1991-01-01), None
patent: 03-180026 (1991-08-01), None
patent: 04-037144 (1992-02-01), None
patent: 04-094532 (1992-03-01), None
patent: 04-152624 (1992-05-01), None
patent: 04-179160 (1992-06-01), None
patent: 04-186734 (1992-07-01), None
patent: 04-206836 (1992-07-01), None
patent: 04-206837 (1992-07-01), None
patent: 04-362616 (1992-12-01), None
patent: 05-013442 (1993-01-01), None
patent: 05-109614 (1993-04-01), None
patent: 05-218428 (1993-08-01), None
patent: 05-335334 (1993-12-01), None
Kugimiya et al., “CW Laser Annealing of Polycrystalline Si . . . Furnace Annealing,” 1982, L19, Japanese J. Appl. Phys. 21.
Wolf et al., “Silicon Processing for the VLSI Era,” 1986, pp. 176-177, Lattice Press, vol. 1.
1985 International Display Research Conference, Active Matrix Addressed Liquid-Crystal Displays, Shinji Morojumi, IEEE pp. 9-13.
Wolf et al., “Silicon Processing for the VLSI Era,”, vol. 1, pp. 308-309, 1986.
Hayzelden et al., “In Situ Transmission Electron Microscopy Studies of Silicide-Mediated Crystallization of Amorphous Silicon,” 3 pages.
Dvurechenskii et al., “Transport Phenomena in Amorphous Silicon Doped by Ion Implantation of 3d Metals,” pp. 635-640.
Hempel et al., “Needle-Like Crystallization of Ni Doped Amorphous Silicon Thin
Nguyen Tuan H.
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Semiconductor device and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of fabricating the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3431386