Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-10
2005-05-10
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S411000, C257S412000, C257S415000, C257S324000
Reexamination Certificate
active
06891236
ABSTRACT:
A semiconductor device using a TFT structure with high reliability is realized. As an insulating film used for the TFT, for example, a gate insulating film, a protecting film, an under film, an interlayer insulating film, or the like, a silicon nitride oxide film (SiNXBYOz) containing boron is formed by a sputtering method. As a result, the internal stress of this film becomes −5×1010dyn/cm2to 5×1010dyn/cm2, preferably −1010dyn/cm2to 1010dyn/cm2, and the film has high thermal conductivity, so that it typically becomes possible to prevent deterioration due to heat generated at the time of an on operation of the TFT.
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