Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

1993-01-19

1994-12-27

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

H01L 2102

Patent

active

053765907

ABSTRACT:
A semiconductor device includes an interlevel film constituted by a first dielectrics film containing dangling bonds and a bonded group of Si and hydrogen, and a second dielectrics film formed on the first dielectrics film.

REFERENCES:
patent: 4371587 (1983-02-01), Peters
patent: 4851370 (1989-07-01), Doklan
patent: 4870475 (1989-09-01), Endo
patent: 4883766 (1989-11-01), Ishida
patent: 4962063 (1990-10-01), Maydan
patent: 5057897 (1991-10-01), Nariani
Masato Kawai, Kenzo Matsuda, Kazumi Miki and Keizo Sakiyama "Interlayered dielectric planarization with TEOS-CVD and SOG". Jun. 13-14, 1988; V-MIC Conf. 1988 IEEE.

Affiliated with

Also associated with

Rating

Semiconductor device and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-919308