Semiconductor device and method of fabricating semiconductor dev

Details Semiconductor device and method of fabricating semiconductor dev Semiconductor device and method of fabricating semiconductor dev

1992-12-14

1994-03-01

Clark, Sheila V.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For plural devices

257724, 257691, H01L 2316, H01L 3902

Patent

active

052910652

ABSTRACT:
A patterned first metal plate (310)is joined to an upper surface of a first ceramic substrate (301), and a second metal plate (330) is joined to an emitter electrode (310E) of the first metal plate (310) through a second ceramic substrate (320). Power devices (4) are mounted on a collector electrode (310C) of the first metal plate (310), and control devices (5) are mounted on the second metal plate (330). The emitter electrode (310E) of a metal layer lies between a high-voltage circuit having the first metal plate (310) and power devices (4) and a control (low-voltage) circuit having the control devices (5) and second metal plate (330). The emitter electrode (310E) serves as a shielding material, and the electrostatic shielding effect prevents noises applied to the high-voltage circuit from being led to the control circuit, so that the faulty operations of the control devices (5) are prevented and the reliability of the semiconductor device is improved.

REFERENCES:
patent: 4920405 (1990-04-01), Itoh et al.

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