Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-05-24
2011-05-24
Smith, Matthew S (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257SE29257, C257SE21419, C438S270000
Reexamination Certificate
active
07948031
ABSTRACT:
A semiconductor device includes a gate electrode formed through an insulating film in a groove having a first side surface adjacent to a source region and a base region, and a second conductive type first impurity region formed adjacent to a second side surface of the groove between the groove and a lead-out portion of a drain region existing below the base region so as to extend downward beyond a lower end of the groove.
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Maki Kenichi
Otake Seiji
Takeda Yasuhiro
Ditthavong Mori & Steiner, P.C.
Jefferson Quovaunda
Sanyo Electric Co,. Ltd.
Sanyo Semiconductor Co. Ltd.
Smith Matthew S
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