Semiconductor device and method of fabricating semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S330000, C257SE29257, C257SE21419, C438S270000

Reexamination Certificate

active

07948031

ABSTRACT:
A semiconductor device includes a gate electrode formed through an insulating film in a groove having a first side surface adjacent to a source region and a base region, and a second conductive type first impurity region formed adjacent to a second side surface of the groove between the groove and a lead-out portion of a drain region existing below the base region so as to extend downward beyond a lower end of the groove.

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Chinese Office Action for corresponding CN Application No. 200810129578.1, dated Dec. 11, 2009, pp. 1-7.
Japanese Office Action for corresponding Patent Application No. JP 2007-175548, dated Aug. 18, 2009, pp. 1-8, Japan.

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