Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-04-28
1994-10-11
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257371, 257378, 257565, 257587, 257592, 257740, 257773, 257774, 257750, H01L 2702
Patent
active
053550099
ABSTRACT:
Insulator films (5) formed on an epitaxial layer (3) are opened such that external base regions (17) are not covered with the insulator films (5). Cross sections (14a) of the insulator films (5) are concavely sloped downward from the insulator films (5) toward an intrinsic base region (18) in the vicinity of the epitaxial layer (3). Base electrodes (15) which are in contact with the insulator films (5) along the cross sections (14a) are connected to the external base regions (17), so that coverage of the base electrodes (15) over the external base regions (17) is improved. The base resistance of a bipolar transistor (101) is reduced.
REFERENCES:
patent: 4962414 (1990-10-01), Liou et al.
patent: 5089872 (1992-02-01), Ozturk et al.
patent: 5220199 (1993-06-01), Owada et al.
"A High Speed Super Self-Aligned Bipolar-CMOS Technology", IEDM IEEE, 1987 Chptr 2.4, pp. 24-27, AT&T Bell Lab., Tzu-Yin Chiu et al.
"0.8 .mu.m Bi-CMOS Technology with High f.sub.T Ion-Implanted Emitter Bipolar Transistor", IEDM IEEE, 1987, Chptr 2.5, pp. 28-31, Semiconductor Device Engineering Lab, Toshiba Corp., H. Iwai et al.
"An 0.8 .mu.m 256K BiCMOS SRAM Technology", IEDM IEEE 1987, Chptr 2.9, pp. 841-843, Semiconductor Process and Des. Ctr., R. H. Havemann et al.
Honda Hiroki
Ishida Masahiro
Ishigaki Yoshiyuki
Uga Kimiharu
Mitsubishi Denki & Kabushiki Kaisha
Wojciechowicz Edward
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