Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-11-24
1994-03-29
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257333, 257336, 257332, 257405, 257655, 437 90, 437105, 437141, 437164, 437203, 437233, 437913, H01L 2906, H01L 21225
Patent
active
052987809
ABSTRACT:
There is disclosed a semiconductor device having a vertical channel MOS gate structure wherein grooves (40) are formed from the top surface of source regions (5) through a body (3) into an N diffusion region (2) and wherein buried gate electrodes (4) fill an inner part of said grooves (40) which is in face-to-face relation to the N diffusion region (2) across gate oxide films (13) while buried oxide films (15) including diffusion source impurities fill an inner part thereof which is in face-to-face relation to the source regions (5). The impurity concentration of the source regions (5) is distributed uniformly in the vertical direction of the grooves (40) and decreases lateraly away from the grooves (40). A current flows through the source region along the grooves and a resistance thereagainst is held small in an ON-state. The grooves may be formed with narrow spacing. The size reduction and high integration of the semiconductor device are achieved as well as reduction in ON-resistance.
REFERENCES:
patent: 5166762 (1992-11-01), Yoshida
IEEE Transactions on Electron Devices, vol. ED-34, No. 11, Nov. 1987, H. R. Chang, et al., "Self-Aligned UMOSFET's With A Specific On-Resistance of 1m.OMEGA.-cm.sup.2 ", pp. 2329-2334.
IEDM 90, pp. 793-797, K. Shenal, et al., "Optimum Low-Voltage Silicon Power Switches Fabricated Using Scaled Trench MOS Technologies".
IEEE Transactions On Electron Devices, vol. 36, No. 9, Sep. 1989, H. R. Chang, et al., "500-V n-Channel Insulated-Gate Bipolar Transistor With A Trench Gate Structure", pp. 1824-1829.
Mitsubishi Denki & Kabushiki Kaisha
Wojciechowicz Edward
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