Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated – With specified encapsulant
Reexamination Certificate
2006-08-29
2006-08-29
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
With specified encapsulant
C257S791000, C257S792000, C257S793000, C257S794000
Reexamination Certificate
active
07098545
ABSTRACT:
A package of a semiconductor device comprising an integrated circuit (10) generally comprises an inner layer (21) and an outer layer (16), which layers (16,21) have a mutual interface (24). An improved stability of the package is realized in that the interface (24) encloses a delamination area (22), which area (22) is isolated from any bond pads (18) of the integrated circuit (10). The delamination area (22) may be created by a pattern-wise activation of a surface of the inner layer (21). A quantity of a curable polymer may be disposed on this surface to achieve this.
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English Translation of JP63-151054.
English Translation of JP62-185343.
Chu Chris C.
Koninklijke Phllips Electronics N.V.
Parker Kenneth
Zawilski Peter
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