Semiconductor device and method of designing the same

Details Semiconductor device and method of designing the same Semiconductor device and method of designing the same

2011-06-06

2011-10-25

Lee, Calvin (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

C438S017000

Reexamination Certificate

active

08044396

ABSTRACT:
A semiconductor device includes a first wiring layer, a second wiring layer and an insulating layer provided between the first wiring layer and the second wiring layer. A capacitor has a first electrode formed on the first wiring layer and a second electrode formed on the second wiring layer in such a manner that the second electrode overlaps with the first electrode. To the first electrode, two connection wirings are connected and, to the second electrode, two connection wirings are connected. The two connection wirings are connected to each other with low DC impedance substantially only through the first electrode. Similarly, the two connection wirings are connected to each other with low DC impedance substantially only through the second electrode.

REFERENCES:
patent: 5977565 (1999-11-01), Ishikawa et al.
patent: 7977124 (2011-07-01), Umeki
Form PTO 892 from US Office Action dated Mar. 7, 2011 for U.S. Appl. No. 12/202,672.

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