Electricity: measuring and testing – Impedance – admittance or other quantities representative of... – Lumped type parameters
Reexamination Certificate
2005-04-05
2005-04-05
Le, N. (Department: 2858)
Electricity: measuring and testing
Impedance, admittance or other quantities representative of...
Lumped type parameters
C324S663000, C257S048000
Reexamination Certificate
active
06876208
ABSTRACT:
It is an object to obtain a semiconductor device having a circuit for CBCM (Charge Based Capacitance Measurement) which can measure a capacitance value with high precision. An MOS transistor constituting a circuit for CBCM has the following structure. More specifically, source-drain regions (4) and (4′) are selectively formed in a surface of a body region (16), and extension regions (5) and (5′) are extended from tip portions of the source-drain regions (4) and (4′) opposed to each other, respectively. A gate insulating film7is formed between the source-drain regions (4) and (4′) including the extension regions (5) and (5′) and a gate electrode (8) is formed on the gate insulating film (7). A region corresponding to a pocket region6(6′) in a conventional structure having a higher impurity concentration than that of a channel region is not formed in a tip portion of the extension region5(5′) and a peripheral portion of the extension region (5).
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Dennis Sylvester, et al., “Investigation of Interconnect Capacitance Characterization Using Charge-Based Capacitance Measurement (CBCM) Technique and Three-Dimensional Simulation”, IEEE Journal of Solid-State Circuits, vol. 33, No. 3, Mar. 1998, pp. 449-453.
Eikyu Katsumi
Kobayashi Mutsumi
Kunikiyo Tatsuya
Ohtani Katsuhiro
Umimoto Hiroyuki
Le N.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Renesas Technology Corp.
Teresinski John
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