Semiconductor device and method having multiple...

Details Semiconductor device and method having multiple... Semiconductor device and method having multiple...

2007-12-04

2007-12-04

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

C438S309000, C438S312000, C438S320000, C438S234000, C438S172000, C438S189000, C438S489000, C257S565000, C257S566000, C257S575000, C257S580000, C257S582000, C257SE21387, C257SE21696

Reexamination Certificate

active

11299682

ABSTRACT:
A semiconductor device and a method of fabricating a semiconductor device having multiple subcollectors which are formed in a common wafer, in order to provide multiple structures having different characteristic and frequency response are provided. The subcollectors may be provided using different doses or different material implants resulting in devices having different optimum unity current gain cutoff frequency (fT) and breakdown voltage (BVCEOand BVCBO) on a common wafer.

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