Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-05
2009-02-03
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S068000, C257S071000, C257S277000, C257S296000, C257S297000, C257S298000, C257S299000, C257S300000, C257S306000, C257S307000, C257S308000, C257S309000, C257S311000, C257S312000, C257S313000, C257S532000, C257S535000, C257S758000, C257S759000, C257S760000, C257S906000, C257S908000, C257S924000
Reexamination Certificate
active
07485915
ABSTRACT:
A semiconductor device includes a capacitor which includes a capacitor insulating film at least including a first insulating film and a ferroelectric film formed in contact with the first insulating film, containing a compound of a preset metal element and a constituent element of the first insulating film as a main component and having a dielectric constant larger than that of the first insulating film, a first capacitor electrode formed of one of Cu and a material containing Cu as a main component, and a second capacitor electrode formed to sandwich the capacitor insulating film in cooperation with the first capacitor electrode.
REFERENCES:
patent: 5195018 (1993-03-01), Kwon et al.
patent: 5742471 (1998-04-01), Barbee et al.
patent: 5798903 (1998-08-01), Dhote et al.
patent: 5851870 (1998-12-01), Alugbin et al.
patent: 6040616 (2000-03-01), Dennis et al.
patent: 6303958 (2001-10-01), Kanaya et al.
patent: 6777776 (2004-08-01), Hieda
patent: 6853535 (2005-02-01), Fox et al.
patent: 7084482 (2006-08-01), Lee et al.
patent: 7180119 (2007-02-01), Baniecki et al.
patent: 2001/0007366 (2001-07-01), Kim et al.
patent: 2003/0227043 (2003-12-01), Kutsunai
patent: 2005/0132549 (2005-06-01), Shih et al.
patent: 2005/0218519 (2005-10-01), Koike et al.
patent: 2005/0219794 (2005-10-01), Iguchi et al.
patent: 540994 (1993-05-01), None
patent: 2002-319625 (2002-10-01), None
patent: 2005-277390 (2005-10-01), None
T. Usui, et al., “Low Resistive and Highly Reliable Cu Dual-Damascene Interconnect Technology Using Self-Formed MnSi OyBarrier Layer,” Proceedings of IEEE IITC, Jun. 2005.
Nasu Hayato
Shibata Hideki
Usui Takamasa
Foley & Lardner LLP
Kabushiki Kaisha Toshiba
Soward Ida M
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