Static information storage and retrieval – Read/write circuit – Having fuse element
Reexamination Certificate
2011-01-18
2011-01-18
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Read/write circuit
Having fuse element
C365S096000
Reexamination Certificate
active
07872934
ABSTRACT:
It is an object to provide memory and a semiconductor device in which falsification of data written thereinto is prevented. The memory includes a memory circuit, a writing circuit, and a reading circuit. The memory circuit has a memory cell array in which a plurality of memory cells where “0” and “1” of binary data can be written are arranged. The writing circuit includes a first writing circuit which writes one of “0” and “1” of binary data into one of the memory cells included in the memory circuit, and a second writing circuit which writes the other of “0” and “1” of binary data into one of the memory cells included in the memory circuit.
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Costellia Jeffrey L.
Hoang Huan
Lappas Jason
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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