Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-03-24
2000-01-11
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257369, 257377, H01L 2976
Patent
active
060139315
ABSTRACT:
A semiconductor device comprises: a semiconductor substrate; a field oxide film formed in the semiconductor substrate, the field oxide film having element forming regions on both sides thereof; a pair of MOS transistors formed in the element forming regions on both sides of the field oxide film, each of the transistors having a gate oxide film, a gate electrode and a pair of source/drain regions; an interlayer insulating film covering the semiconductor substrate, the field oxide film and the transistors; a local interconnect formed by embedding a conductive material in a first opening formed in the interlayer insulating film, the first opening being arranged above the field oxide film and having a greater width than the field oxide film, an inner one of the pair of source/drain regions of each of the pair of transistors being exposed to the first opening, the inner one of the pair of source/drain regions of one of the pair of transistors being electrically connected to the inner one of the pair of source/drain regions of the other of the pair of transistors by means of the local interconnect; and a pair of buried contacts formed by embedding a pair of conductive materials in a pair of second openings formed in the interlayer insulating film, the pair of second openings being arranged above an outer one of the pair of source/drain regions of each of the pair of transistors, the outer one of the pair of source/drain regions being exposed to the second openings.
REFERENCES:
patent: 4945070 (1990-07-01), Hsu
patent: 5693975 (1997-12-01), Lien
Igarashi Wataru
Naruke Yasuo
Kabushiki Kaisha Toshiba
Prenty Mark V.
LandOfFree
Semiconductor device and method for producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method for producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for producing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1464358