Semiconductor device and method for producing the same

Details Semiconductor device and method for producing the same Semiconductor device and method for producing the same

2006-06-20

2006-06-20

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S735000

Reexamination Certificate

active

07064081

ABSTRACT:
The invention provides a semiconductor device having less defectives in shape of a patterned wiring layer even in a case of having a wiring layer for which patterning is required to be carried out over a longer period of etching time, and a method for producing the same. By carrying out dry etching using a fluorine-based gas with a photoresist17aused as a mask, an auxiliary mask15ais formed by patterning the insulation membrane. Next, by carrying out dry etching using a chlorine-based gas using the auxiliary mask15aand the remaining photoresist17aas masks, wiring13ais formed by patterning the wiring layer13.In the second etching, the auxiliary mask15ais scarcely etched. Therefore, if the thickness of the photoresist17ais equivalent to that in the prior arts, it is possible to pattern a thicker wiring layer13than in the prior arts.

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