Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Patent
1997-12-09
1999-07-06
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
257108, 438 53, H01L 2984
Patent
active
059201061
ABSTRACT:
A semiconductor pressure detection device includes a diaphragm formed at a portion of a P- conductivity type semiconductor substrate having a reduced thickness. Gauge resistors are formed on the surface of an N- conductivity type semiconductor layer formed on the substrate. An N+ conductivity type diffusion layer is formed in the N- conductivity type semiconductor layer to fix the electric potential of the N- conductivity type layer. The first conductivity type area surrounds the diaphragm. Therefore, when the N- conductivity type area is supplied with electric potential, the potential gradient in the N- conductivity type layer is small. Thus, the leakage current which flows to a pn junction between the gauge resistors and the N- conductivity type area is reduced.
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Fukada Tsuyoshi
Ikuta Toshio
Oba Nobukazu
Sakai Minekazu
Suzuki Yasutoshi
Denso Corporation
Hardy David B.
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