Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-02-08
2005-02-08
Thomas, Tom (Department: 2815)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S612000, C438S618000, C438S623000, C438S637000, C438S642000
Reexamination Certificate
active
06852616
ABSTRACT:
A first element electrode and a second element electrode connected electrically to a semiconductor element on a substrate are formed, and then an insulating film is formed on the substrate including the element electrodes. Thereafter, a first opening for exposing the first element electrode and a second opening for exposing the second element electrode are formed on the insulating film. Then, a first external electrode connected to the first element electrode via the first opening is formed immediately above the first element electrode. Furthermore, a second external electrode and a connecting wire having one end connected to the second element electrode via the second opening and the other end connected to the second external electrode are formed on the insulating film.
REFERENCES:
patent: 3461357 (1969-08-01), Mutter et al.
patent: 5684304 (1997-11-01), Smears
patent: 5869357 (1999-02-01), Zambrano
patent: 5933752 (1999-08-01), Yanagida
patent: 6111317 (2000-08-01), Okada et al.
patent: 6300234 (2001-10-01), Flynn et al.
patent: 6445001 (2002-09-01), Yoshida
patent: 03-159152 (1991-07-01), None
patent: 08-102466 (1996-04-01), None
patent: 08-222571 (1996-08-01), None
patent: 09-064049 (1997-03-01), None
patent: 11-068018 (1999-03-01), None
Notice of reasons of rejection dated Sep. 16, 2003.
Kainoh Kazuyuki
Kumakawa Takahiro
Sahara Ryuichi
Shimoishizaka Nozomi
Watase Kazumi
Richards N. Drew
Thomas Tom
LandOfFree
Semiconductor device and method for producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method for producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for producing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3486090