Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2011-04-26

2011-04-26

Doan, Theresa T (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S336000, C257S401000, C257S492000, C438S286000

Reexamination Certificate

active

07932558

ABSTRACT:
A semiconductor device includes: an n-type first well diffusion layer; an n-type second well diffusion layer; a p-type source diffusion layer; a p-type third well diffusion layer; a p-type drain diffusion layer; a gate insulating film; a gate electrode; a device isolation insulating film; and a buffer layer. The buffer layer is formed between the first well diffusion layer and the third well diffusion layer to be in contact with an end of the third well diffusion layer opposing the source diffusion layer, and extends from immediately below the gate insulating film to a position deeper than a peak of curvature of impurity concentration distribution of the third well diffusion layer. The buffer layer has an impurity concentration lower than an impurity concentration in the third well diffusion layer.

REFERENCES:
patent: 5517046 (1996-05-01), Hsing et al.
patent: 5917217 (1999-06-01), Kitamura et al.
patent: 5981997 (1999-11-01), Kitamura
patent: 6448625 (2002-09-01), Hossain et al.
patent: 2006/0199344 (2006-09-01), Tanaka
patent: 09-260651 (1997-10-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2672074