Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2011-01-25

2011-01-25

Gurley, Lynne A (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S622000, C257SE29256, C257SE29268

Reexamination Certificate

active

07875929

ABSTRACT:
A semiconductor device including a well region formed in a silicon substrate; a trench exposing a predetermined portion of the uppermost surface of the semiconductor substrate; a body layer formed in the semiconductor substrate at the trench; a device isolation layer formed in the well region; a gate insulating layer formed in the trench over the body layer; a gate electrode formed in the trench over the gate insulating layer and against the device isolation layer; a lightly doped drain region formed in the body layer; an insulating layer formed in the trench over the lightly doped drain region; a source region formed in the body layer; a drain region formed in the well region against the device isolation layer; and a body region formed in the body layer against the source region. The on-resistance can be reduced by forming the gate and source beneath the device isolating layer.

REFERENCES:
patent: 6046474 (2000-04-01), Oh et al.
patent: 6900101 (2005-05-01), Lin
patent: 6909143 (2005-06-01), Jeon et al.
patent: 2005/0142786 (2005-06-01), Sung
patent: 2007/0045767 (2007-03-01), Zhu et al.

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