Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-04-12
2011-04-12
Tran, Long K (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S067000, C257S068000, C257S069000, C257S070000, C257SE27108, C257SE27109, C257SE27111, C257SE27112
Reexamination Certificate
active
07923781
ABSTRACT:
It is an object to achieve high performance of a semiconductor integrated circuit depending on not only a microfabrication technique but also another way and to achieve low power consumption of a semiconductor integrated circuit. A semiconductor device is provided in which a crystal orientation or a crystal axis of a single-crystalline semiconductor layer for a MISFET having a first conductivity type is different from that of a single-crystalline semiconductor layer for a MISFET having a second conductivity type. A crystal orientation or a crystal axis is such that mobility of carriers traveling in a channel length direction is increased in each MISFET. With such a structure, mobility of carriers flowing in a channel of a MISFET is increased, and a semiconductor integrated circuit can be operated at higher speed. Further, low voltage driving becomes possible, and low power consumption can be achieved.
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Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Tran Long K
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