Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2011-06-21

2011-06-21

Huynh, Andy (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S371000, C257SE21177, C257SE27108, C257SE21632, C257S204000, C257SE27062, C257SE27064, C257SE27067, C438S199000, C438S592000

Reexamination Certificate

active

07964918

ABSTRACT:
A gate electrode of one of an nFET and a pFET includes a metal-containing layer in contact with a gate insulating film and a first silicon-containing layer formed on the metal-containing layer, and a gate electrode of the other FET includes a second silicon-containing layer in contact with a gate insulating film and a third silicon-containing layer formed on the second silicon-containing layer. The first silicon-containing layer and the third silicon-containing layer are formed by the same silicon-containing material film.

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Nishida, Y. et al., “Advanced Poly-Si NMIS and Poly-Si/TiN PMIS Hybrid-gate High-k CMIS using PVD/CVD-Stacked TiN and Local Strain Technique,” 2007, Syposium on VLSI Technology Digest of Technical Papers, pp. 214-215.

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