Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2009-12-18
2011-10-11
Chu, Chris (Department: 2815)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE23020, C257S781000, C257S786000, C438S118000, C438S666000
Reexamination Certificate
active
08034703
ABSTRACT:
In a pad forming region electrically connecting an element forming region to the outside, in which a low dielectric constant insulating film is formed in association with in the element forming region, a Cu film serving as a via formed in the low dielectric constant insulating film in the pad forming region is disposed in higher density than that of a Cu film serving as a via in the element forming region. Hereby, when an internal stress occurs, the stress is prevented from disproportionately concentrating on the via, and deterioration of a function of a wiring caused thereby can be avoided.
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Ikeda Masanobu
Kimura Takahiro
Watanabe Ken'ichi
Chu Chris
Fujitsu Semiconductor Limited
Westerman Hattori Daniels & Adrian LLP
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