Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2009-08-13

2011-11-01

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S230000, C438S265000, C438S595000, C257S336000, C257S408000, C257SE21435

Reexamination Certificate

active

08048730

ABSTRACT:
Disclosed are a semiconductor device and a method for manufacturing the same. The semiconductor device includes an isolation area formed on a semiconductor substrate to define NMOS and PMOS areas, a gate insulating layer and a gate formed on each of the NMOS and PMOS areas, a primary gate spacer formed at sides of the gate, LDD areas formed in the semiconductor substrate at sides of the gate, a secondary gate spacer formed at sides of the primary gate spacer, source and drain areas formed in the semiconductor substrate at sides of the gate of the PMOS area; and source and drain areas formed in the semiconductor substrate at sides of the gate of the NMOS area, wherein the source and drain areas of the NMOS area are deeper than the source and drain areas of the PMOS area.

REFERENCES:
patent: 6905923 (2005-06-01), Paton et al.
patent: 2007/0128786 (2007-06-01), Cheng et al.

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