Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2005-08-30

2011-11-22

Blum, David S (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S635000, C257SE21266, C257SE29165, C438S287000, C438S591000, C438S463000

Reexamination Certificate

active

08063452

ABSTRACT:
A gate insulating film having a high dielectric constant, a semiconductor device provided with the gate insulating film, and a method for manufacturing such film and device are provided. The semiconductor device is provided with a group 14 (IVA) semiconductor board and a first oxide layer. The first oxide layer is composed of MO2existing on the board, where M is a first metal species selected from the group 4 (IVB); and M′xOy, where M′ is a second metal species selected from the group 3 (IIIB) and a group composed of lanthanide series, and x and y are integers decided by the oxidation number of M.

REFERENCES:
patent: 2002/0113261 (2002-08-01), Iwasaki
patent: 2004/0053472 (2004-03-01), Kiryu et al.
patent: 2004011741 (2004-01-01), None
patent: 2004079606 (2004-03-01), None
patent: 2004-111741 (2004-08-01), None
Wilk, G.D., et al., “High-k gate dielectrics: Current status and materials properties considerations,” Journal of Applied Physics 89(10):5243-5275, May 15, 2001.

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