Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-03-18
2011-10-25
Landau, Matthew (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S310000, C257S325000, C257S406000, C257S411000, C257SE21639, C438S216000, C438S240000, C438S261000, C438S287000, C438S591000
Reexamination Certificate
active
08044452
ABSTRACT:
The present invention provides a high-quality semiconductor device in which deterioration in transistor characteristics and an increase in interface layer due to a gate insulating film are suppressed, and a method for manufacturing the same. In the present invention, an interface layer, a diffusion suppressing layer and a high dielectric constant insulating film are formed sequentially in this order on one surface of a silicon substrate.
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Koji Tominaga
Kunihiko Iwamoto
Tetsuji Yasuda
Toshihide Nabatame
Cantor & Colburn LLP
Landau Matthew
Malek Maliheh
Rohm & Co., Ltd.
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