Semiconductor device and method for manufacturing the same

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S637000, C257S758000, C257SE21575

Reexamination Certificate

active

08039387

ABSTRACT:
A semiconductor device and a method for manufacturing the same includes forming a via pattern having a matrix form in a dielectric layer. The via pattern includes a via slit provided at the center of the via pattern and a plurality of via holes provided at an outer periphery of the via pattern and surrounding the via slit. Metal plugs are formed in the via holes.

REFERENCES:
patent: 6881597 (2005-04-01), Asayama et al.
patent: 7692274 (2010-04-01), Chen et al.
patent: 2002/0024115 (2002-02-01), Ibnabdeljalil et al.
patent: 2002/0153611 (2002-10-01), Nakanishi
patent: 2005/0073052 (2005-04-01), Mori et al.
patent: 2005/0161822 (2005-07-01), Ohkubo et al.
patent: 2005/0161831 (2005-07-01), Nakamura
patent: 2005/0173773 (2005-08-01), Kim
patent: 2006/0103017 (2006-05-01), Usui et al.
patent: 2006/0264034 (2006-11-01), Endo et al.
patent: 2007/0145589 (2007-06-01), Kim
patent: 2007/0246796 (2007-10-01), Guo et al.
patent: 2008/0017991 (2008-01-01), Kim
patent: 2008/0131991 (2008-06-01), Kim
patent: 10-1998-066710 (1998-10-01), None
patent: 2003050953 (2003-06-01), None
patent: 10-2006-0016981 (2006-02-01), None

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