Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2010-12-20
2011-11-08
Garber, Charles (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
08053827
ABSTRACT:
It is made possible to provide a method for manufacturing a semiconductor device that has a high-quality insulating film in which defects are not easily formed, and experiences less leakage current. A method for manufacturing a semiconductor device, includes: forming an amorphous silicon layer on an insulating layer; introducing oxygen into the amorphous silicon layer; and forming a silicon oxynitride layer by nitriding the amorphous silicon layer having oxygen introduced thereinto.
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Matsushita Daisuke
Mitani Yuuichiro
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Garber Charles
Kabushiki Kaisha Toshiba
Stevenson Andre′ C
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