Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2006-02-06

2010-11-02

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29129

Reexamination Certificate

active

07825453

ABSTRACT:
A semiconductor device includes a memory cell gate structure having a first gate insulating film, a first gate electrode, a second gate insulating film, and a second gate electrode, a select gate structure having a third gate insulating film and a third gate electrode including a first electrode portion, a second electrode portion, and a third electrode portion between the first electrode portion and the second electrode portion, a first impurity diffusion layer formed in a surface area of the semiconductor substrate and located at a portion which corresponds to an area between the memory cell gate structure and the first electrode portion, and a second impurity diffusion layer formed in a surface area of the semiconductor substrate and located at a portion which corresponds to an area between the first electrode portion and second electrode portion.

REFERENCES:
patent: 6667211 (2003-12-01), Watanabe
patent: 6845042 (2005-01-01), Ichige et al.
patent: 6979860 (2005-12-01), Miwa
patent: 2003/0094635 (2003-05-01), Yaegashi
patent: 2005/0018485 (2005-01-01), Noguchi et al.
patent: 8-64788 (1995-03-01), None
patent: 11-74369 (1999-03-01), None
patent: 2003-51557 (2003-02-01), None
patent: 2004-356491 (2004-12-01), None
Notification of Reasons for Rejection mailed by the Japanese Patent Office on Apr. 13, 2010, in counterpart Japanese Patent Appln No. 2005-086341.

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