Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2006-04-06

2010-02-09

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S529000

Reexamination Certificate

active

07659188

ABSTRACT:
The present invention provides a method for manufacturing a semiconductor device which includes a step of forming one optional impurity region in a semiconductor substrate at a place apart from the surface thereof, and in the method described above, ion implantation is performed a plurality of times while the position of an end portion of a mask pattern used for ion implantation is changed.

REFERENCES:
patent: 4920065 (1990-04-01), Chin et al.
patent: 5155061 (1992-10-01), O'Connor et al.
patent: 10-199993 (1998-07-01), None
patent: 2003-347541 (2003-12-01), None
Machine translation of JP 2003-347541.

Affiliated with

Also associated with

Rating

Semiconductor device and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4228143