Semiconductor device and method for manufacturing the same

Metal working – Method of mechanical manufacture – Assembling or joining

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29571, 29576R, 29578, 148 15, 148DIG8, 148DIG117, 148DIG122, 357 47, 357 59, 357 71, H01L 21304, H01L 2144

Patent

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046253912

ABSTRACT:
A method of forming electric conductive patterns comprising the steps of forming first conductive patterns on a semiconductor substrate directly or through an insulating layer with first insulating film being formed thereon, selectively forming second conductive patterns, forming insulation layers on side surfaces of said second conductive patterns, thereby electrically insulating said second conductive patterns from said first conductive patterns through said insulation layers in a self-aligned manner. An semiconductor device having electric conductive patterns formed by above-mentioned method.

REFERENCES:
patent: 3940288 (1976-02-01), Takagi et al.
patent: 4078963 (1978-03-01), Symersky
patent: 4184909 (1980-01-01), Chang et al.
patent: 4234362 (1980-11-01), Riseman
patent: 4251571 (1981-02-01), Garbarino et al.
patent: 4352238 (1982-10-01), Shimbo
IBM Technical Disclosure Bulletin, vol. 17, No. 6 Nov. 1974.

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