Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2007-12-21

2010-12-07

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S637000, C257SE23165, C257SE21210, C257S315000, C257S314000, C438S591000

Reexamination Certificate

active

07847340

ABSTRACT:
The present invention provides a semiconductor device and a method of manufacturing the semiconductor device, the semiconductor device including: ONO films that are formed on a semiconductor substrate and include trapping layers; word lines that are formed on the ONO films; and silicon oxide layers that are formed at portions on the semiconductor substrate, the portions being located between the word lines, the silicon oxide layers being located between the trapping layers.

REFERENCES:
patent: 2005/0214996 (2005-09-01), Yoshino
patent: 2006/0240615 (2006-10-01), Shih
patent: 2006/0267080 (2006-11-01), Hayakawa et al.

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