Semiconductor device and method for manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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Details

C257S209000, C257SE21592, C257SE21149

Reexamination Certificate

active

07821100

ABSTRACT:
A semiconductor device includes a protection target element formed on a semiconductor substrate and includes a protection target element electrode, a substrate connecting part including a substrate connecting electrode electrically connected to the semiconductor substrate and a fuse structure provided between the protection target element electrode and the substrate connecting electrode and includes a fuse film configured to be torn by applying a predetermined current thereto. The protection target element electrode, the substrate connecting electrode and the fuse film are formed of an integral conductive film as long as the fuse film is not torn.

REFERENCES:
patent: 3792319 (1974-02-01), Tsang
patent: 4412241 (1983-10-01), Nelson
patent: 4517583 (1985-05-01), Uchida
patent: 4518981 (1985-05-01), Schlupp
patent: 4679310 (1987-07-01), Ramachandra et al.
patent: 4862243 (1989-08-01), Welch et al.
patent: 5376820 (1994-12-01), Crafts et al.
patent: 5914524 (1999-06-01), Komenaka
patent: 5949127 (1999-09-01), Lien et al.
patent: 6117714 (2000-09-01), Beatty
patent: 6266290 (2001-07-01), Sredanovic et al.
patent: 6337502 (2002-01-01), Eitan et al.
patent: 6365938 (2002-04-01), Lee et al.
patent: 6537883 (2003-03-01), Chen et al.
patent: 6551864 (2003-04-01), Marr et al.
patent: 2001/0017755 (2001-08-01), Toyoshima
patent: 2001/0026970 (2001-10-01), Eitan et al.
patent: 2002/0027248 (2002-03-01), Aipperspach et al.
patent: 2003/0045087 (2003-03-01), Yoshie et al.
patent: 2004/0070049 (2004-04-01), Anderson et al.
patent: 2006/0118904 (2006-06-01), Liaw
patent: 2007/0152265 (2007-07-01), Moriyama et al.
patent: 2007/0273002 (2007-11-01), Hwang
patent: 2009/0174029 (2009-07-01), Ueda
patent: 2001-0057389 (2001-02-01), None

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