Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2008-06-12

2010-10-26

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S334000, C257S344000, C257S350000, C257S408000

Reexamination Certificate

active

07821083

ABSTRACT:
A semiconductor device includes a structure of a gate electrode/a high-k dielectric insulating film containing aluminum and having a dielectric constant greater than that of a silicon oxide film/the silicon oxide film/a silicon substrate, and is provided with a diffusion layer formed by diffusing an aluminum atom or an aluminum ion to the silicon oxide film or an interface between the silicon oxide film and the silicon substrate by a heat treatment. A laminated film or a mixed film of hafnium oxide and aluminum oxide having a ratio of hafnium and aluminum ranging from about 2:8 to 8:2 is used as the high-k dielectric film. The heat treatment is performed at any temperature from about 500 to 1000° C. for any period of time from about 1 to 100 seconds.

REFERENCES:
patent: 2009/0065873 (2009-03-01), Park et al.
patent: 2003-158262 (2003-05-01), None
patent: 2005-19891 (2005-01-01), None
patent: 2005-72490 (2005-03-01), None
patent: 2005-150737 (2005-06-01), None
patent: 2005-277318 (2005-10-01), None
patent: 2006-41306 (2006-02-01), None
patent: 2005038929 (2005-04-01), None
Japanese Office action for 2007-158383 dated Sep. 15, 2009.

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