Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-06-16
2010-12-28
Ha, Nathan W (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21209
Reexamination Certificate
active
07859045
ABSTRACT:
Disclosed is a method of manufacturing a semiconductor device, which includes exposing a photoresist using an exposing mask provided with a light-shielding pattern having two or more narrow width portions, developing the photoresist to form a plurality of stripe-shaped resist patterns, selectively etching a first conductive film using the resist pattern as a mask, forming an intermediate insulating film on the first conductive film, forming a second conductive film on the intermediate insulating film, and forming, by patterning the first conductive film, the intermediate insulating film, and the second conductive film, a flash memory cell and a structure constructed by forming a lower conductor pattern, a segment of the intermediate insulating film, and a dummy gate electrode in this stacking order.
REFERENCES:
patent: 7075140 (2006-07-01), Spadea
patent: 7235476 (2007-06-01), Nakagawa
patent: 7307332 (2007-12-01), Nakagawa
patent: 7391071 (2008-06-01), Park et al.
patent: 7504688 (2009-03-01), Nakagawa
patent: 7642592 (2010-01-01), Koo et al.
patent: 7652324 (2010-01-01), Liu
patent: 7663178 (2010-02-01), Arai et al.
patent: 7663912 (2010-02-01), Jeon
patent: 2001/0044184 (2001-11-01), Tanaka
patent: 2001/0045590 (2001-11-01), Kobayashi
patent: 2002/0011624 (2002-01-01), Ishige
patent: 2003/0085421 (2003-05-01), Takeuchi et al.
patent: 2005/0110071 (2005-05-01), Ema et al.
patent: 2006/0226469 (2006-10-01), Nakagawa
patent: 2007/0200166 (2007-08-01), Nakagawa
patent: 2009/0191700 (2009-07-01), Nakagawa
patent: 1-188857 (1989-07-01), None
patent: 8-148658 (1996-06-01), None
patent: 2000-286350 (2000-10-01), None
patent: 2001-332708 (2001-11-01), None
patent: 2005-129760 (2005-05-01), None
patent: 2005-142362 (2005-06-01), None
patent: 2005-244086 (2005-09-01), None
International Search Report of PCT/JP2005/022917, date of mailing Mar. 20, 2006.
Nakagawa Shin-ichi
Sannomiya Itsuro
Fujitsu Semiconductor Limited
Ha Nathan W
Westerman Hattori Daniels & Adrian LLP
LandOfFree
Semiconductor device and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4205839