Semiconductor device and method for manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257SE21209

Reexamination Certificate

active

07859045

ABSTRACT:
Disclosed is a method of manufacturing a semiconductor device, which includes exposing a photoresist using an exposing mask provided with a light-shielding pattern having two or more narrow width portions, developing the photoresist to form a plurality of stripe-shaped resist patterns, selectively etching a first conductive film using the resist pattern as a mask, forming an intermediate insulating film on the first conductive film, forming a second conductive film on the intermediate insulating film, and forming, by patterning the first conductive film, the intermediate insulating film, and the second conductive film, a flash memory cell and a structure constructed by forming a lower conductor pattern, a segment of the intermediate insulating film, and a dummy gate electrode in this stacking order.

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International Search Report of PCT/JP2005/022917, date of mailing Mar. 20, 2006.

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