Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1990-04-30
1993-08-17
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257412, 257655, 257315, H01L 2904, H01L 2968
Patent
active
052371964
ABSTRACT:
A poly-Si film is formed on a first insulating film overlying a semiconductor substrate. A second insulating film is formed on the poly-Si film. The poly-Si film comprises a layered structure of a non-single crystal type silicon film and contains a phosphorus concentration of less than 5.times.10.sup.20 cm.sup.-3 or contains no phosphor, a poly-Si film having a phosphorus concentration of over 5.times.10.sup.20 cm.sup.-3 and a poly-Si film having a phosphorus concentration of less than 5.times.10.sup.20 cm.sup.-3 or containing no phosphorus. Since the phosphorus concentrations of the non-single crystal type silicon film adjacent to the first insulating film and poly-Si film adjacent to the second insulating film are reduced, the phosphorus in these two films are not diffused toward the corresponding insulating films. It is thus possible to improve the breakdown voltage across the first and second insulating films.
REFERENCES:
patent: 4380773 (1983-04-01), Goodman
patent: 4584760 (1986-04-01), Okazawa
patent: 4597159 (1986-07-01), Usami et al.
patent: 4755865 (1988-07-01), Wilson et al.
Devices Electronics for Integrated Circuits: 2nd Edition by Muller and Kamins, Copyright 1977, 1986, by John Wiley & Sons, Inc., Section 10.6 pp. 505-514.
Harbeke et al., "LPCVD Polycrystalline Silicon: Growth and Physical Properties of In-Situ Phosphorus Doped and Undoped Films", Jun. 1983, pp. 287-322.
Flowers, "Gate Oxide Degradation in the Polysilicon Doping/Activation Process," J. Electrochem. Soc., vol. 134, No. 3, pp. 698-702, Mar. 1987.
Ishihara Katsunori
Mikata Yuuichi
Kabushiki Kaisha Toshiba
Prenty Mark V.
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