Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2008-06-06

2010-11-02

Ha, Nathan W (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257SE21614

Reexamination Certificate

active

07824971

ABSTRACT:
A semiconductor device includes a PMOS transistor of a peripheral circuit region. The PMOS transistor is formed over a silicon germanium layer to have a compressive strain structure, thereby increasing hole mobility of a channel region in operation of the device. The semiconductor device may include a second active region including a silicon layer connected to a first active region of a semiconductor substrate, a silicon germanium layer formed over the silicon layer expected to be a PMOS region, and a PMOS gate formed over the silicon germanium layer.

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Notice of Rejection for Korean Patent Application No. 10-2008-0018877, dated Jun. 30, 2009.

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