Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-03-06
2010-10-26
Lee, Hsien-ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S374000, C257S499000, C257S506000, C257SE21293, C438S778000, C438S791000
Reexamination Certificate
active
07821071
ABSTRACT:
An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.
REFERENCES:
patent: 5108843 (1992-04-01), Ohtaka et al.
patent: 5247190 (1993-09-01), Friend et al.
patent: 5254208 (1993-10-01), Zhang
patent: 5273920 (1993-12-01), Kwasnick et al.
patent: 5298455 (1994-03-01), Arai et al.
patent: 5306651 (1994-04-01), Masumo et al.
patent: 5323042 (1994-06-01), Matsumoto
patent: 5399502 (1995-03-01), Friend et al.
patent: 5504020 (1996-04-01), Aomori et al.
patent: 5508532 (1996-04-01), Teramoto
patent: 5594569 (1997-01-01), Konuma et al.
patent: 5640067 (1997-06-01), Yamauchi et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5707746 (1998-01-01), Yaoi et al.
patent: 5731613 (1998-03-01), Yamazaki et al.
patent: 5747830 (1998-05-01), Okita
patent: 5771110 (1998-06-01), Hirano et al.
patent: 5773325 (1998-06-01), Teramoto
patent: 5815223 (1998-09-01), Watanabe et al.
patent: 5858823 (1999-01-01), Yamazaki et al.
patent: 5893730 (1999-04-01), Yamazaki et al.
patent: 5897328 (1999-04-01), Yamauchi et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5949107 (1999-09-01), Zhang
patent: 5970384 (1999-10-01), Yamazaki et al.
patent: 6048758 (2000-04-01), Yamazaki et al.
patent: 6087229 (2000-07-01), Aronowitz et al.
patent: 6093577 (2000-07-01), Van Der Groen et al.
patent: 6157426 (2000-12-01), Gu
patent: 6165695 (2000-12-01), Yang et al.
patent: 6165824 (2000-12-01), Takano et al.
patent: 6166414 (2000-12-01), Miyazaki et al.
patent: 6174590 (2001-01-01), Iyer et al.
patent: 6198133 (2001-03-01), Yamazaki et al.
patent: 6215163 (2001-04-01), Hori et al.
patent: 6225645 (2001-05-01), Zhang
patent: 6271897 (2001-08-01), Ichikawa et al.
patent: 6274516 (2001-08-01), Kamei et al.
patent: 6281552 (2001-08-01), Kawasaki et al.
patent: 6285042 (2001-09-01), Ohtani et al.
patent: 6300253 (2001-10-01), Moore et al.
patent: 6306694 (2001-10-01), Yamazaki et al.
patent: 6316810 (2001-11-01), Yamazaki et al.
patent: 6335541 (2002-01-01), Ohtani et al.
patent: 6365933 (2002-04-01), Yamazaki et al.
patent: 6380558 (2002-04-01), Yamazaki et al.
patent: 6399988 (2002-06-01), Yamazaki
patent: 6420282 (2002-07-01), Batey et al.
patent: 6429483 (2002-08-01), Teramoto
patent: 6461899 (2002-10-01), Kitakado et al.
patent: 6478263 (2002-11-01), Yamazaki et al.
patent: 6507069 (2003-01-01), Zhang et al.
patent: 6524895 (2003-02-01), Yamazaki et al.
patent: 6531713 (2003-03-01), Yamazaki
patent: 6534826 (2003-03-01), Yamazaki
patent: 6580094 (2003-06-01), Yamazaki et al.
patent: 6614052 (2003-09-01), Zhang
patent: 6645826 (2003-11-01), Yamazaki et al.
patent: 6773971 (2004-08-01), Zhang et al.
patent: 6809343 (2004-10-01), Yamazaki et al.
patent: 6815271 (2004-11-01), Zhang
patent: 6906383 (2005-06-01), Zhang et al.
patent: 7183614 (2007-02-01), Zhang et al.
patent: 7279752 (2007-10-01), Yamazaki et al.
patent: 7352003 (2008-04-01), Zhang
patent: 7635895 (2009-12-01), Zhang et al.
patent: 2001/0004121 (2001-06-01), Sakama et al.
patent: 2001/0046791 (2001-11-01), Subramanian et al.
patent: 2003/0100150 (2003-05-01), Kitakado et al.
patent: 2004/0079952 (2004-04-01), Yamazaki et al.
patent: 2008/0029765 (2008-02-01), Yamazaki et al.
patent: 5-152331 (1993-06-01), None
patent: 5-275702 (1993-10-01), None
patent: 6-260499 (1994-09-01), None
patent: 7-130652 (1995-05-01), None
patent: 7-335900 (1995-12-01), None
patent: 8-32080 (1996-02-01), None
patent: 8-64834 (1996-03-01), None
patent: 8-78329 (1996-03-01), None
patent: 9-17729 (1997-01-01), None
patent: 9-162405 (1997-06-01), None
patent: 9-191111 (1997-07-01), None
patent: 10-92576 (1998-04-01), None
patent: 10-135468 (1998-05-01), None
patent: 10-135469 (1998-05-01), None
patent: 10-247735 (1998-09-01), None
patent: 11-223839 (1999-08-01), None
patent: 2000-269506 (2000-09-01), None
patent: 2001-135824 (2001-05-01), None
patent: WO 90/13148 (1990-11-01), None
patent: WO 99/10918 (1999-03-01), None
Yeh, J-L et al., “Structural and Optical Properties of Amorphous Silicon Oxynitride,” J. Appl. Phys., (Journal of Applied Physics) vol. 79, No. 2, Jan. 15, 1996, pp. 656-663.
Yoshida, T. et al., “33.2: A Full-Color Thresholdless Antiferroelectric LCD Exhibiting Wide Viewing Angle With Fast Response Time,” SID Digest '97: SID International Symposium Digest of Technical Papers, 1997, pp. 841-844.
Furue, H. et al., “P-78: Characteristics and Driving Scheme of Polymer-Stabilized Monostable FLCD Exhibiting Fast Response Time and High Contrast Ratio With Gray-Scale Capability,” SID Digest '98: SID International Symposium Digest of Technical Papers, 1998, pp. 782-785.
Inui, S. et al., “Thresholdless Antiferroelectricity in Liquid Crystals and its Application to Displays,” J. Mater. Chem. (Journal of Materials Chemistry), vol. 6, No. 4, 1996, pp. 671-673.
Yoshihara, T., “Time Division Full Color LCD by Ferroelectric Liquid Crystal,” Ekisho, vol. 3, No. 3, Jul. 25, 1999, pp. 190-194.
Schenk, H. et al., “Polymers for Light Emitting Diodes,” Eurodisplay '99: Proceedings of the 19th IDRC (International Display Research Conference Proceedings), Sep. 6, 1999, pp. 33-37.
Terada, M. et al., “Half-V Shaped Switching Mode FLCD,” Proceedings of 46th Applied Physics Association Lectures, vol. 28p-V-8, Mar. 1, 1999, p. 1316.
Hayakawa Masahiko
Sakama Mitsunori
Toriumi Satoshi
Husch Blackwell LLP Welsh & Katz
Lee Hsien-ming
Semiconductor Energy Laboratory Co,. Ltd.
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