Semiconductor device and method for manufacturing the same

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation

Reexamination Certificate

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Reexamination Certificate

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07851341

ABSTRACT:
A semiconductor device is provided including a transistor element on a substrate, a silicide on a gate and a source/drain of the transistor element; and an amorphous capping layer on the silicide.

REFERENCES:
patent: 5376405 (1994-12-01), Doan et al.
patent: 5902129 (1999-05-01), Yoshikawa et al.
patent: 6596643 (2003-07-01), Chen et al.
patent: 6936535 (2005-08-01), Kim et al.
patent: 2006/0079087 (2006-04-01), Kawamura et al.
patent: 2004-299280 (2006-04-01), None

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