Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2007-06-01

2010-06-22

Pham, Thanhha (Department: 2894)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S254000, C438S397000, C438S672000, C257SE21578

Reexamination Certificate

active

07741215

ABSTRACT:
The present invention provides a method for manufacturing a semiconductor device, including the step of forming a hole penetrating an insulating film over a semiconductor substrate, wherein the step includes the steps of forming a pedestal at a position where a hole to be formed; forming an insulating film to bury the pedestal; forming a first hole in the insulating film so as to expose a top surface of the pedestal; and removing the pedestal to form a second hole continuous with the first hole to form a hole penetrating the insulating film.

REFERENCES:
patent: 2005/0136644 (2005-06-01), Inukai et al.
patent: 2005/0287738 (2005-12-01), Cho et al.
patent: 60-250650 (1985-12-01), None
patent: 09-045633 (1997-02-01), None
patent: 10-050835 (1998-02-01), None
patent: 2001-035921 (2001-02-01), None

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