Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2005-12-30
2009-12-01
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S717000, C216S005000, C216S041000
Reexamination Certificate
active
07625822
ABSTRACT:
A method for manufacturing a semiconductor device deposits a plurality of bottom antireflective coating films to prevent a standing wave caused by a light source of a short wavelength in forming a fine pattern. The method includes forming a pattern formation layer on an entire surface of a wafer, forming two or more bottom antireflective coating films on the pattern formation layer, forming a photoresist film pattern on a predetermined region of the bottom antireflective coating films, etching the bottom antireflective coating films using the photoresist film pattern as a mask, forming sidewall spacers at sides of the photoresist film pattern, and etching the pattern formation layer using the sidewall spacers and the photoresist film pattern as masks.
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Brewster William M.
Dongbu Electronics Co. Ltd.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
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