Semiconductor device and method for manufacturing the same...

Semiconductor device manufacturing: process – Chemical etching – Combined with coating step

Reexamination Certificate

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C438S717000, C216S005000, C216S041000

Reexamination Certificate

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07625822

ABSTRACT:
A method for manufacturing a semiconductor device deposits a plurality of bottom antireflective coating films to prevent a standing wave caused by a light source of a short wavelength in forming a fine pattern. The method includes forming a pattern formation layer on an entire surface of a wafer, forming two or more bottom antireflective coating films on the pattern formation layer, forming a photoresist film pattern on a predetermined region of the bottom antireflective coating films, etching the bottom antireflective coating films using the photoresist film pattern as a mask, forming sidewall spacers at sides of the photoresist film pattern, and etching the pattern formation layer using the sidewall spacers and the photoresist film pattern as masks.

REFERENCES:
patent: 6423474 (2002-07-01), Holscher
patent: 6630397 (2003-10-01), Ding et al.
patent: 6780708 (2004-08-01), Kinoshita et al.
patent: 6995437 (2006-02-01), Kinoshita et al.
patent: 2005/0186754 (2005-08-01), Kim
patent: 2006/0263699 (2006-11-01), Abatchev et al.
patent: 2007/0049039 (2007-03-01), Jang et al.
patent: 2007/0093070 (2007-04-01), Ghandehari et al.
patent: 2007/0122753 (2007-05-01), Jang

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