Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2006-11-28

2009-08-18

Pham, Thanhha (Department: 2894)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S638000, C438S701000, C257SE21579

Reexamination Certificate

active

07575996

ABSTRACT:
Embodiments relate to a semiconductor device and a method for manufacturing the same. Embodiments may include forming a lower porous oxide layer on a semiconductor substrate having a conductive layer, forming a pyrolytic polymer layer on the lower porous oxide layer, forming an upper porous oxide layer on the pyrolytic polymer layer, forming a via hole by sequentially etching the upper porous oxide layer, the pyrolytic polymer layer, and the lower porous oxide layer, forming a trench having a width larger than a width of the via hole by sequentially etching the upper porous oxide layer and the pyrolytic polymer layer in such a manner that the trench is connected with the via hole, forming metal interconnections by filling the via hole and the trench with a metal thin film, and forming a vacuum between the upper and lower porous oxide layers by removing the pyrolytic polymer layer.

REFERENCES:
patent: 2005/0230836 (2005-10-01), Clarke et al.

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