Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2006-08-25

2009-10-27

Doan, Theresa T (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C257S347000, C438S300000

Reexamination Certificate

active

07608868

ABSTRACT:
The present invention discloses improved semiconductor device and method for manufacturing wherein one side of a source and drain region and a portion of a channel region are disposed on a buried oxide layer formed on a semiconductor substrate and the side of the source and drain region and another portion of the channel region are disposed on a Si epitaxial layer formed on a semiconductor substrate.

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Malgorzata Jurczak et al., “Silicon-on-Nothing (SON)-an Innovative Process for Advanced CMOS”, IEEE, Nov. 2000, pp. 2179-2187, vol. 47, No. 11.

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